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d a t a sh eet product speci?cation november 1992 discrete semiconductors blf521 uhf power mos transistor
november 1992 2 philips semiconductors product speci?cation uhf power mos transistor blf521 features high power gain easy power control gold metallization good thermal stability withstands full load mismatch designed for broadband operation. description silicon n-channel enhancement mode vertical d-mos transistor designed for communications transmitter applications in the uhf frequency range. the transistor is encapsulated in a 4-lead, sot172d studless envelope, with a ceramic cap. all leads are isolated from the mounting base. pinning - sot172d pin description 1 source 2 gate 3 drain 4 source pin configuration caution the device is supplied in an antistatic package. the gate-source input must be protected against static charge during transport and handling. warning product and environmental safety - toxic materials this product contains beryllium oxide. the product is entirely safe provided that the beo disc is not damaged. all persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. after use, dispose of as chemical or special waste according to the regulations applying at the location of the user. it must never be thrown out with the general or domestic waste. fig.1 simplified outline and symbol. o ok, halfpage 2 1 4 3 msb007 top view s d g mbb072 quick reference data rf performance at t amb = 25 c in a common source test circuit. mode of operation f (mhz) v ds (v) p l (w) g p (db) h d (%) cw, class-b 500 12.5 2 > 10 > 50
november 1992 3 philips semiconductors product speci?cation uhf power mos transistor blf521 limiting values in accordance with the absolute maximum system (iec 134). thermal resistance note 1. mounted on printed circuit board, see fig.12. symbol parameter conditions min. max. unit v ds drain-source voltage - 40 v v gs gate-source voltage - 20 v i d dc drain current - 1a p tot total power dissipation up to t mb =25 c - 10 w t stg storage temperature - 65 150 c t j junction temperature - 200 c symbol parameter thermal resistance r th j-mb thermal resistance from junction to mounting base 17.5 k/w r th j-a thermal resistance from junction to ambient (note 1) 75 k/w fig.2 dc soar. (1) current in this area may be limited by r ds(on) . (2) t mb =25 c. handbook, halfpage 0.1 1 1 10 100 5 (1) i d (a) v ds (v) mra989 (2) fig.3 power/temperature derating curves. (1) continuous operation. (2) short-time operation during mismatch. handbook, halfpage 0 40 80 160 16 12 4 0 8 120 mda486 (1) (2) p tot (w) t mb ( c)
november 1992 4 philips semiconductors product speci?cation uhf power mos transistor blf521 characteristics t j = 25 c unless otherwise speci?ed. symbol parameter conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 3 ma 40 -- v i dss drain-source leakage current v gs = 0; v ds = 12.5 v -- 10 m a i gss gate-source leakage current v gs = 20 v; v ds =0 -- 1 m a v gs(th) gate-source threshold voltage i d = 3 ma; v ds =10v 2 - 4.5 v g fs forward transconductance i d = 0.3 a; v ds = 10 v 80 135 - ms r ds(on) drain-source on-state resistance i d = 0.3 a; v gs =15v - 3.5 4 w i dsx on-state drain current v gs = 15 v; v ds =10v - 1.3 - a c is input capacitance v gs =0;v ds = 12.5 v; f = 1 mhz - 5.3 - pf c os output capacitance v gs =0;v ds = 12.5 v; f = 1 mhz - 7.8 - pf c rs feedback capacitance v gs =0;v ds = 12.5 v; f = 1 mhz - 1.8 - pf fig.4 temperature coefficient of gate-source voltage as a function of drain current, typical values. v ds =10v. handbook, halfpage 15 - 5 5 10 0 mda485 1 i d (a) t.c (mv/k) 10 10 2 10 3 fig.5 drain current as a function of gate-source voltage, typical values. v ds =10v ; t j =25 c. handbook, halfpage 04 20 1600 1200 400 0 800 81216 mda484 i d (ma) v gs (v)
november 1992 5 philips semiconductors product speci?cation uhf power mos transistor blf521 fig.6 drain-source on-state resistance as a function of junction temperature, typical values. i d = 0.3 a; v gs =15v. handbook, halfpage 04080 r dson ( w ) t j ( c) 160 5 0 4 120 3 2 1 mda483 fig.7 input and output capacitance as functions of drain-source voltage, typical values. v gs = 0; f = 1 mhz. handbook, halfpage 0 30 20 10 0 4 c os c is v ds (v) c (pf) 816 12 mda482 fig.8 feedback capacitance as a function of drain-source voltage, typical values. v gs = 0; f = 1 mhz. handbook, halfpage 048 c rs (pf) v ds (v) 16 5 0 4 12 3 2 1 mda481
november 1992 6 philips semiconductors product speci?cation uhf power mos transistor blf521 application information for class-b operation t amb =25 c; r gs = 274 w , unless otherwise speci?ed. rf performance in a common source class-b test circuit. mode of operation f (mhz) v ds (v) i dq (ma) p l (w) g p (db) h d (%) cw, class-b 500 12.5 10 2 > 10 typ. 13 > 50 typ. 60 ruggedness in class-b operation the blf521 is capable of withstanding a load mismatch corresponding to vswr = 50:1 through all phases under the following conditions: v ds = 15.5 v; f = 500 mhz at rated output power. fig.9 power gain and efficiency as functions of load power, typical values. class-b operation; v ds = 12.5 v; i dq = 10 ma; z l = 9.5 + j12.8; f = 500 mhz. handbook, halfpage 0.5 1.5 p l (w) g p (db) 2.5 3.5 20 0 16 12 8 4 100 0 80 60 40 20 mda480 g p h d (%) h d fig.10 load power as a function of input power, typical values. class-b operation; v ds = 12.5 v; i dq = 20 ma; z l = 9.5 + j12.8; f = 175 mhz. handbook, halfpage 0 0.2 1.0 4 3 1 0 2 0.4 0.6 0.8 mda479 p l (w) p in (w)
november 1992 7 philips semiconductors product speci?cation uhf power mos transistor blf521 fig.11 test circuit for class-b operation. f = 500 mhz. handbook, full pagewidth mda475 d.u.t. c2 c3 c12 l1 l2 l3 c1 l5 l8 l10 l9 l6 r1 r2 r6 c11 l4 c15 50 w output 50 w input + v d c4 c8 c5 c6 r4 r5 c7 r3 c9 l7 c10 c14 c13 blf521
november 1992 8 philips semiconductors product speci?cation uhf power mos transistor blf521 list of components (class-ab test circuit) notes 1. american technical ceramics (atc) capacitor, type 100b or other capacitor of the same quality. 2. american technical ceramics (atc) capacitor, type 100a or other capacitor of the same quality. 3. the striplines are on a double copper-clad printed circuit board, with ptfe fibre-glass dielectric ( e r = 2.2), thickness 1.6 mm. component description value dimensions catalogue no. c1, c5, c8, c15 multilayer ceramic chip capacitor (note 1) 390 pf, 500 v c2, c13 ?lm dielectric trimmer 2 to 9 pf 2222 809 09002 c3 multilayer ceramic chip capacitor (note 2) 5.6 pf, 500 v c4 ?lm dielectric trimmer 2 to 18 pf 2222 809 09003 c6, c11 multilayer ceramic chip capacitor 2 100 nf in parallel, 50 v 2222 852 47104 c7, c9 multilayer ceramic chip capacitor 100 nf, 50 v 2222 852 47104 c10 electrolytic capacitor 10 m f, 63 v 2222 030 38109 c12 multilayer ceramic chip capacitor (note 2) 9.1 pf, 50 v c14 ?lm dielectric trimmer 1.4 to 5.5 pf 2222 809 09001 l1 stripline (note 3) 83 w 20 2mm l2 stripline (note 3) 83 w 21 2mm l3 stripline (note 3) 83 w 19 2mm l4, l5 stripline (note 3) 67 w 12 3mm l6 5 turns enamelled 0.5 mm copper wire 62 nh length 3.75 mm int. dia. 3 mm leads 2 4mm l7 grade 3b ferroxcube rf choke 4312 020 36642 l8 stripline (note 3) 83 w 18.6 2mm l9 stripline (note 3) 83 w 31.6 2mm l10 stripline (note 3) 83 w 2 2mm r1 0.4 w metal ?lm resistor 274 w 2322 151 72741 r2 0.4 w metal ?lm resistor 1.96 k w 2322 151 71962 r3 0.4 w metal ?lm resistor 1 m w 2322 151 71005 r4 cermet potentiometer 5 k w r5 0.4 w metal ?lm resistor 7.5 k w 2322 151 77502 r6 1 w metal ?lm resistor 10 w 2322 153 51009
november 1992 9 philips semiconductors product speci?cation uhf power mos transistor blf521 fig.12 component layout for 500 mhz test circuit. the circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to serve as a ground plane. earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets. handbook, full pagewidth mba381 + v ds r4 l1 c1 c2 l2 c3 l3 c4 r3 c7 r2 c5 r1 l4 l5 c8 r6 l7 c9 c10 c11 c13 c12 l10 c14 c15 l8 c6 l9 l6 handbook, full pagewidth mba380 150 mm 70 mm strap rivets rivets rivets strap strap strap mounting screws (6x)
november 1992 10 philips semiconductors product speci?cation uhf power mos transistor blf521 fig.13 input impedance as a function of frequency (series components), typical values per section. class-b operation; v ds = 12.5 v; i dq = 10 ma; r gs = 274 w ;p l =2w. handbook, halfpage 100 50 0 - 50 - 100 200 x i r i f (mhz) z i ( w ) 300 500 400 mda478 fig.14 load impedance as a function of frequency (series components), typical values. class-b operation; v ds = 12.5 v; i dq = 10 ma; r gs = 274 w ;p l =2w. handbook, halfpage 100 200 300 z l ( w ) f (mhz) 500 50 0 40 400 30 20 10 mda477 x l r l fig.15 definition of mos impedance. handbook, halfpage mba379 z i z l fig.16 power gain as a function of frequency, typical values. class-b operation; v ds = 12.5 v; i dq = 10 ma; r gs = 274 w ;p l =2w. handbook, halfpage 100 200 300 g p (db) f (mhz) 500 20 0 16 400 12 8 4 mda476
november 1992 11 philips semiconductors product speci?cation uhf power mos transistor blf521 common emitter s-parameters measured at v ds = 12.5 v and i d = 100 ma. measured at v ds = 12.5 v and i d = 150 ma. f (mhz) s 11 s 21 s 12 s 22 magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) 40 0.968 - 24.0 10.749 161.5 0.044 72.6 0.900 - 27.4 100 0.864 - 55.4 9.105 138.3 0.094 51.7 0.828 - 62.4 200 0.701 - 91.0 6.353 112.7 0.130 29.7 0.735 - 100.8 300 0.626 - 112.4 4.693 97.0 0.140 17.2 0.693 - 122.7 400 0.587 - 127.0 3.622 85.6 0.141 9.4 0.678 - 136.3 500 0.580 - 137.1 2.959 76.5 0.139 4.0 0.675 - 145.4 600 0.580 - 144.6 2.498 68.8 0.135 0.0 0.675 - 152.1 700 0.581 - 151.7 2.131 61.4 0.130 - 2.5 0.677 - 157.5 800 0.588 - 157.6 1.874 54.7 0.123 - 4.3 0.677 - 162.3 900 0.596 - 163.5 1.656 48.8 0.115 - 4.8 0.683 - 166.9 1000 0.605 - 168.8 1.473 43.0 0.107 - 4.4 0.689 - 171.2 f (mhz) s 11 s 21 s 12 s 22 magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) 40 0.965 - 25.9 11.435 160.6 0.044 72.0 0.876 - 29.2 100 0.857 - 58.7 9.534 136.8 0.092 50.1 0.804 - 65.7 200 0.691 - 95.1 6.529 111.3 0.125 28.6 0.715 - 104.3 300 0.622 - 116.7 4.783 96.0 0.134 16.7 0.678 - 125.8 400 0.588 - 130.3 3.663 84.8 0.135 9.2 0.666 - 138.8 500 0.580 - 140.8 2.988 75.9 0.133 4.3 0.665 - 147.5 600 0.582 - 147.8 2.515 68.4 0.128 0.7 0.666 - 154.0 700 0.586 - 154.9 2.154 61.2 0.123 - 1.3 0.668 - 159.1 800 0.588 - 160.5 1.897 54.6 0.117 - 2.6 0.669 - 163.8 900 0.599 - 166.3 1.673 48.8 0.111 - 2.6 0.675 - 168.1 1000 0.609 - 171.7 1.493 43.0 0.103 - 1.7 0.681 - 172.3
november 1992 12 philips semiconductors product speci?cation uhf power mos transistor blf521 measured at v ds = 12.5 v and i d = 200 ma. measured at v ds = 12.5 v and i d = 250 ma. f (mhz) s 11 s 21 s 12 s 22 magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) 40 0.965 - 26.7 11.660 160.1 0.044 71.4 0.854 - 30.4 100 0.851 - 60.7 9.625 135.9 0.091 49.4 0.783 - 67.7 200 0.688 - 97.5 6.524 110.5 0.123 27.9 0.699 - 106.5 300 0.623 - 118.8 4.751 95.2 0.131 16.4 0.666 - 127.6 400 0.590 - 132.7 3.644 84.3 0.132 9.2 0.657 - 140.3 500 0.585 - 142.4 2.968 75.3 0.130 4.3 0.658 - 148.7 600 0.583 - 150.0 2.495 67.8 0.126 1.0 0.659 - 155.0 700 0.589 - 156.7 2.137 60.7 0.120 - 0.8 0.662 - 160.0 800 0.593 - 162.2 1.877 54.3 0.114 - 1.9 0.664 - 164.6 900 0.602 - 167.8 1.656 48.4 0.108 - 1.7 0.670 - 168.9 1000 0.612 - 173.0 1.476 42.8 0.100 - 0.5 0.677 - 173.0 f (mhz) s 11 s 21 s 12 s 22 magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) 40 0.963 - 27.3 11.640 159.7 0.045 70.8 0.832 - 31.3 100 0.848 - 62.0 9.567 135.2 0.092 48.9 0.766 - 69.2 200 0.686 - 99.3 6.434 109.8 0.123 27.4 0.688 - 108.2 300 0.624 - 120.3 4.674 94.6 0.130 16.0 0.657 - 128.9 400 0.594 - 134.2 3.582 83.8 0.130 8.9 0.651 - 141.3 500 0.585 - 143.9 2.914 74.7 0.128 4.2 0.651 - 149.6 600 0.590 - 150.8 2.447 67.4 0.124 0.9 0.654 - 155.8 700 0.595 - 157.6 2.097 60.3 0.119 - 0.6 0.658 - 160.7 800 0.601 - 163.1 1.840 53.8 0.113 - 1.7 0.660 - 165.2 900 0.607 - 168.8 1.625 48.0 0.106 - 1.3 0.667 - 169.4 1000 0.613 - 174.1 1.447 42.2 0.099 - 0.1 0.673 - 173.3
november 1992 13 philips semiconductors product speci?cation uhf power mos transistor blf521 package outline references outline version european projection issue date iec jedec eiaj sot172d 97-06-28 h b b 1 h 0 5 10 mm scale q a d d 1 c studless ceramic package; 4 leads sot172d 1 2 3 4 unit a mm d b 3.31 3.04 b 1 0.89 0.63 0.16 0.10 5.20 4.95 5.33 5.08 1.15 0.88 3.71 2.89 c d 1 h 26.17 24.63 inches 0.13 0.12 0.035 0.025 0.006 0.004 0.205 0.195 0.210 0.200 0.045 0.035 0.146 0.114 1.03 0.97 q dimensions (millimetre dimensions are derived from the original inch dimensions)
november 1992 14 philips semiconductors product speci?cation uhf power mos transistor blf521 definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.

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